infrared led chip gaas/gaa s 1. material substrate gaas (n type) epitaxial layer gaas (p/n type) 2. electrode n(cathode) side gold alloy p(anode) side gold alloy 3. electro-optical parameter s ymbo l min typ max unit condition characteristics f orward voltag e v f 1.6 v if=100ma reverse voltag e v r 8 v ir=10ua power p o 0.479 0.62 mw if=50ma p 940 nm if=20ma ? 45 nm if=20ma note : power is measured by sorter e/t system with bare chip. 4. mechanical data (a) emission area -------------------- - 13.8mil x 13.8mil (b) bottom area -------------------- - 14.6mil x 14.6mil (c) bonding pad -------------------- - 135um (d) chip thickness -------------------- - 11mil (e) junction height -------------------- - 8.2mil epi epi p n p side electrode n side electrode eoyang factory,513-5 eoyang-dong, iksan, 570-210, korea tel. +82 63 839 1111 fax. +82 63 835 8259 www.auk.co.kr OPA9451 wavelength auk corp. (c) (a) (b) (e) (d) substrate
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